AON3816 20v n-channel mosfet general description product summary v ds i d (at v gs =4.5v) 4a r ds(on) (at v gs = 4.5v) < 22m w r ds(on) (at v gs = 4v) < 23m w r ds(on) (at v gs = 2.5v) < 28m w esd protected symbol v ds v gs v 1 2 gate-source voltage drain-source voltage 20 the AON3816 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 1.8v while retaining a 12v v gs(max) rating. it is esd protected. this device is suitab le for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 20v dfn 3x3 top view bottom view pin 1 g1 s1 g2 s2 d1 d1 d2 d2 2 4 5 1 3 86 7 top view g1 g2 d1 s1 d2 s2 v gs i dm t j , t stg symbol t 10s steady-state steady-state r q jl pulsed drain current b continuous drain current f parameter typ t c =25c 1.6 t c =70c junction and storage temperature range -55 to 150 t c =25c c thermal characteristics units maximum junction-to-ambient a c/w r q ja 40 75 50 max v 1 2 gate-source voltage t c =70c a i d 4 3.1 maximum junction-to-ambient a 30 95 40 40 power dissipation f p d w 2.5 maximum junction-to-lead c c/w c/w dfn 3x3 top view bottom view pin 1 g1 s1 g2 s2 d1 d1 d2 d2 2 4 5 1 3 86 7 top view g1 g2 d1 s1 d2 s2 rev 4: july 2010 www.aosmd.com page 1 of 5
AON3816 symbol min typ max units bv dss 20 v v ds =20v, v gs =0v 1 t j =55c 5 i gss 10 m a v gs(th) gate threshold voltage 0.3 0.7 1.1 v i d(on) 40 a 18 22 t j =125c 23 29 19 23 m w 22.5 28 m w g fs 33 s v sd 0.6 1 v i s 3.5 a c iss 730 920 1100 pf c oss 110 155 200 pf c rss 45 75 105 pf r g 2.4 k w q g 8.8 11 13 nc q gs 1.6 2 2.4 nc q gd 1.9 3.2 4.5 nc t d(on) 0.3 m s t 0.6 m s maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time v =5v, v =10v, r =2.5 w , gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =4.5v, v ds =10v, i d =4a gate source charge gate drain charge switching parameters i s =1a,v gs =0v v ds =5v, i d =4a v gs =4v, i d =4a v gs =2.5v, i d =4a i dss m a v ds =v gs i d =250 m a v ds =0v, v gs = 10v zero gate voltage drain current gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions v gs =4.5v, i d =4a reverse transfer capacitance v gs =0v, v ds =10v, f=1mhz forward transconductance diode forward voltage r ds(on) static drain-source on-resistance m w drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =4.5v, v ds =5v t r 0.6 m s t d(off) 7.9 m s t f 4.4 m s this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. turn-on rise time turn-off delaytime v gs =5v, v ds =10v, r l =2.5 w , r gen =3 w turn-off fall time a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the value in any given application depends on the user 's specific board design. b: repetitive rating, pulse width limited by juncti on temperature. c. the r q ja is the sum of the thermal impedence from junction t o lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the soa curve provides a single pulse rating. f. the power dissipation and current rating is bas ed on the t 10s thermal resistance, and current rating is also limited by wire-bonding. rev 4: july 2010 www.aosmd.com page 2 of 5
AON3816 typical electrical and thermal characteristics 17 52 10 0 18 0 5 10 15 20 0 0.5 1 1.5 2 2.5 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 5 10 15 20 25 30 0 5 10 15 20 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) v gs =2.5v v gs =3.1v 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =4a v gs =2.5v i d =4a v gs =4v i d =4a 25 c 125 c v ds =5v v gs =4.5v 0 10 20 30 40 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =1.5v 2v 4v 10v 3v 40 0 5 10 15 20 0 0.5 1 1.5 2 2.5 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 5 10 15 20 25 30 0 5 10 15 20 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) v gs =2.5v v gs =3.1v 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 125 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =4a v gs =2.5v i d =4a v gs =4v i d =4a 5 10 15 20 25 30 35 40 0 2 4 6 8 10 r ds(on) (m w ww w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) 25 c 125 c v ds =5v v gs =4.5v i d =4a 25 125 0 10 20 30 40 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =1.5v 2v 4v 10v 3v rev 4: july 2010 www.aosmd.com page 3 of 5
AON3816 typical electrical and thermal characteristics 17 52 10 0 18 0 1 2 3 4 5 0 2 4 6 8 10 12 14 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 1200 1400 0 5 10 15 20 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 40 80 120 0.0001 0.001 0.01 0.1 1 10 100 power (w) pulse width (s) figure 10: single pulse power rating junction-to- case (note f) c oss c rss v ds =10v i d =4a t j(max) =150 c t a =25 c 10 m s 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 10ms 1ms dc r ds(on) t j(max) =150 c t a =25 c 100 m s 40 0 1 2 3 4 5 0 2 4 6 8 10 12 14 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 1200 1400 0 5 10 15 20 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 40 80 120 0.0001 0.001 0.01 0.1 1 10 100 power (w) pulse width (s) figure 10: single pulse power rating junction-to- case (note f) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 z q qq q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) c oss c rss v ds =10v i d =4a single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150 c t a =25 c 10 m s 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 10ms 1ms dc r ds(on) t j(max) =150 c t a =25 c 100 m s r q ja =95 c/w rev 4: july 2010 www.aosmd.com page 4 of 5
AON3816 AON3816 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off id + l vgs vds bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr rev 4: july 2010 www.aosmd.com page 5 of 5
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